- 您现在的位置：买卖IC网 > Sheet目录134 > ISL9R8120P2 (Fairchild Semiconductor)8 AMP 1200V STEALTH DIODE
Package Marking and Ordering Information
Electrical Characteristics TC
= 25
°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
R8120P2
ISL9R8120P2 TO-220AC
N/A
50
R8120S3S
ISL9R8120S3S TO-263AB
24mm
800
Symbol
Parameter
Test Conditions
Min Typ Max
Unit
IR
Instantaneous Reverse Current
VR
= 1200
V
TC
= 25
°C - - 100 μA
TC
= 125
°C--1.0mA
VF
Instantaneous Forward Voltage
IF = 8
A
TC
= 25
°C-2.83.3V
TC
= 125
°C-2.73.1V
CJ
Junction Capacitance
VR = 10
V,
I
F
= 0
A
- 30 - pF
trr
Reverse Recovery Time
IF
= 1
A,
dI
F/dt
=
100
A/μs,
V
R
= 30
V
- 25 32 ns
IF
= 8
A,
dI
F/dt
=
100
A/μs,
V
R
= 30
V
- 35 44 ns
trr
Reverse Recovery Time
IF
= 8
A,
dIF/dt
= 200
A/μs,
VR
= 780
V,
T
C
= 25°C
- 300 - ns
Irr
Reverse Recovery
C
urrent
- 4.3 - A
Qrr
Reverse Recovered Charge
- 525 - nC
trr
Reverse Recovery Time
IF
= 8
A,
)-dIF/dt
= 200
A/μs,
9--
C
urrent
VR
= 780
V,
- 5.5 - A
TC
= 125°C
- 375 - ns
S Softness Factor (tb/ta
Irr
Reverse Recovery
Qrr
Reverse Recovered Charge
- 1.1 - μC
trr
Reverse Recovery Time
IF
= 8
A,
)-dIF/dt
= 1000
A/μs,
5.5--
C
urrent
VR
= 780
V,
- 11 - A
TC
= 125°C
- 200 - ns
S Softness Factor (tb/ta
Irr
Reverse Recovery
Qrr
Reverse Recovered Charge
- 1.2 - μC
dIM/dt Maximum di/dt during tb
- 310 - A/μs
RθJC
Thermal Resistance Junction to Case TO-220, TO-263
- - 1.75
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220, TO-263
- - 62
°C/W
ISL9R8120P2
,
ISL9R8120S3S
8
A, 1200
V,
STEALTH? Diode
?2002
Fairchild
Semiconductor Corporation
ISL9R8120P2, ISL9R8120S3S
Rev.
B
www.fairchildsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ISL9R860PF2
DIODE STEALTH 600V 8A TO-220F
ISL9R860S3ST
DIODE STEALTH 600V 8A TO-263AB
L614F
MODULE SCR/DIO 42.5A 480VAC PCB
LL4148
DIODE SMALL SIGNAL GP SOD80
LQA06T300
DIODE 300V 6A TO-220AC
LQA08TC600
DIODE FPC 600V 8A TO-220AC
M1MA152AT1G
DIODE SW SS 100MA 80V SC-59
M1MA152KT1G
DIODE SW SS 100MA 80V SC-59
相关代理商/技术参数
ISL9R8120P2
制造商:Fairchild Semiconductor Corporation 功能描述:Bridge Rectifier 制造商:Fairchild Semiconductor Corporation 功能描述:FAST DIODE, 8A, 1.2KV, TO-220AC
ISL9R8120P2
制造商:Fairchild Semiconductor Corporation 功能描述:DIODE FAST 8A 1200V TO-220 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE, FAST, 8A, 1200V, TO-220
ISL9R8120P2_Q
功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R8120S3ST
功能描述:整流器 8A 1200V STEALTH RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R8120S3ST_Q
功能描述:整流器 8A 1200V STEALTH
RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R860P2
功能描述:整流器 8a 600V Stealth Single RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
ISL9R860P2
制造商:Fairchild Semiconductor Corporation 功能描述:FAST RECOVERY POWER DIODE
ISL9R860P2_Q
功能描述:整流器 8a 600V Stealth Single RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel